Micron Mobile DRAM
Micron Technology, one of the world's top three DRAM manufacturers (alongside Samsung and SK Hynix), is headquartered in the United States. 2. Product type: Mobile DRAM memory chips (LPDDR series). Based on the BGA packaging form and solder ball arrangement, it is identified as low-power mobile memory. 3. Silk-screen code: LEU in the upper right corner of the back is Micron's internal speed/specification/batch code, used to distinguish capacity, speed, and process versions. 4. Packaging form: Standard FBGA (Flip-Chip Ball Grid Array) packaging. The hollow-center solder ball arrangement is a typical feature of Micron's mobile memory.
Core Hardware Parameters (Micron Mainstream LPDDR5/LPDDR5X Specifications) Table
Parameter Item | Specification Range
Single Die Capacity | 4Gb ~ 24Gb (corresponding to 512MB ~ 3GB)
Data Rate | LPDDR5: 5500 / 6400 Mbps; LPDDR5X: 7500 / 8533 / 9600 Mbps
Bit Width Architecture | x16 / x32 Bit Width
Operating Voltage | 0.5V ~ 1.8V Multi-level Dynamic Voltage Scaling
Process Technology | 1α nm / 1β nm Advanced DRAM Process
Standard Compliance | Compliant with JEDEC LPDDR5/LPDDR5X International Standards