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Samsung 1TB eUFS Embedded Flash Storage Chip

1TB eUFSE mbedded Flash memory

1TB eUFSE mbedded Flash memory

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Brand: SAMSUNG Electronics (a leading global flash memory manufacturer). 2. Product Type: eUFS (embedded Universal Flash Storage), an embedded universal flash storage used as the internal storage (hard drive) for smartphones and tablets, which is completely distinct from the previous LPDDR RAM. 3. Capacity Specification: 1TB in a single package. 4. Package Form: 153-ball FBGA (Flip-Chip Ball Grid Array) package. The image on the right shows the solder ball array on the chip's backside. It has a standard size of 11.5×13.0mm and is compatible with mobile device motherboards.

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Technical Specification

y Concept Differentiation: eUFS Storage vs. LPDDR RAM

Many people confuse these two, but their core differences are as follows:

1. eUFS (the chip in this image) = Internal Hard Drive

- Data is not lost when power is disconnected; stores the system, apps, photos, videos, and game files.

- Common capacity units: 128GB/256GB/512GB/1TB.

2. LPDDR (chips in the first two images) = Running Memory (RAM)

- Data is cleared when power is disconnected; only temporarily loads currently running programs.

- Common capacity units: 6GB/8GB/12GB/16GB.


Storage Medium: Fifth-Generation V-NAND Vertical Stacked Flash, 16-Layer Stacked 512Gb Flash Die. Read/Write Speed: Sequential Read 850MB/s, Sequential Write 260MB/s. Interface Standard: UFS 2.1 MIPI Dual-Channel, supporting parallel read and write transmission. Package Size: 11.5 × 13.0 × 1.2 mm. Operating Temperature Range: -25℃ ~ 85℃ (Consumer Electronics Standard). Hardware Integration: Built-in Samsung self-developed flash controller, error correction algorithm, and security encryption module. Subsequent Iterations: UFS 3.1/4.0 Version 1TB Die with Significant Performance Upgrades: • UFS 4.0 1TB: Sequential Read 4200MB/s, Write 2800MB/s, utilizing 176-layer seventh-generation V-NAND.


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